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Data Sheet
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? 2011 ROHM Co., Ltd. All rights reserved.
Schottky barrier diode
RB085T-60
?Applications
?Dimensions
(Unit : mm)
?Structure
Switching power supply
?Features
1) Cathode common type.
(TO-220)
2) Low IR
3) High reliability
?Construction
Silicon epitaxial planer
?Absolute maximum ratings
(Ta=25
?C)
Parameter LimitsSymbol Unit
Reverse voltage (repetitive peak)
VRM
V
Reverse voltage (DC) 60VR
V
Average rectified forward current (*1) Io A10
Forward current surge peak (60Hz / 1cyc) (*1)
IFSM
A
Junction temperature 150Tj
?C
Tstg
?C
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=130?C
?Electrical characteristic
(Ta=25
?C)
Symbol Min. Typ. Max. Unit
Forward voltage
VF
- - 0.58 V
IF=5A
Reverse current
IR
- - 300
?A
VR=60V
Thermal impedance
?jc
- - 2.5
?C/W
junction to case
Storage temperature
?40 to ?150
Conditions
Parameter
60
100
(1) (2) (3)
1/3
2011.04 - Rev.D
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